Use left and right arrow keys to seek audio. SK hynix is reportedly using the EUV process in the development of its next-gen DRAM, with its 1c DRAM (6th-generation 10nm-class) for which transitional ...

Use left and right arrow keys to seek audio. Samsung has reached around 50% yield rate for its next-gen 1c DRAM for HBM4 according to new reports, intensifying its rivalry with SK hynix on next-gen ...

Micron Technology, Inc., has announced production sampling of its new 1Gb DDR2 device fabricated on 68-nanometer (nm) DRAM process technology. The new process, coupled with Micron’s 6F² technology, ...

To address the ongoing memory crisis, ASUS is reportedly planning to enter the DRAM manufacturing market by the second quarter of 2026. By establishing its own production lines, the tech giant aims to ...

Samsung and SK hynix are taking different bets on next-generation DRAM as AI turns memory into a knife fight. Industry insiders claim the Korean memory giants are taking separate routes to make ...

Samsung Electronics and SK hynix are taking sharply different approaches in their bid to lead the 10-nanometer-class sixth-generation DRAM segment (1c, 11–12 nanometer-class), the latest battleground ...

Samsung Electronics is reportedly preparing to convert portions of its NAND flash production lines in Pyeongtaek and Hwaseong into DRAM facilities as the company races to meet surging demand for ...

Global memory giants are phasing out or discontinuing DDR4 DRAM production to accelerate capacity shifts toward advanced process products such as DDR5 and high-bandwidth memory (HBM), causing severe ...