Abstract: Artificial neural network-based gallium nitride high-electron-mobility transistor (ANN-based GaN HEMT) models have garnered significant attention due to their high accuracy, low development ...
Abstract: Dynamic resistance degradation, which is severely affected by the trapping effect, is a critical challenge for lateral AlGaN/GaN power devices, especially when operating in high-voltage and ...
Imec’s practical approach to their 300-mm GaN program, including the challenges and opportunities of moving to larger wafer diameters. Imec, an open R&D organization that specializes in ...
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