IEEE

The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

Abstract: There is continuous activity to increase the efficiency and reduce the size of power electronic systems and modules developed for transportation and automotive electrification applications ...

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IEEE

Gate Stress Polarity Dependence of AC Bias Temperature Instability in Silicon Carbide MOSFETs

Abstract: As the silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistor (MOSFET) develops, increasing efforts are placed on ac bias temperature instability (AC BTI). It was ...
C&EN

Molybdenum Carbide Buried in D-Shaped Fibers as a Novel Saturable Absorber Device for Ultrafast Photonics Applications

School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, ...
C&EN

Silicon-Carbide Nanocrystals from Nonthermal Plasma: Surface Chemistry and Quantum Confinement

Department of Physics, North Dakota State University, Fargo, North Dakota 58108, United States Materials & Nanotechnology Program, North Dakota State University, Fargo, North Dakota 58108, United ...