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Redefining GaN power devices for adoption in EVs and data centers
Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...
An advanced gate design could reshape EV and data center power systems.
EPC's GaN Technology Strengthens Renesas' Market Presence in High-Volume Consumer and AI Power. Together, EPC and ...
NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...
onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless semiconductor company that was spun out of the renowned power device group at the Engineering Department of the University ...
HAVERHILL, Mass.--(BUSINESS WIRE)--For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and ...
Efficient Power Conversion (EPC) has entered into a strategic agreement with Renesas Electronics that will see the ...
A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.
STMicroelectronics gave the industry its first look into the company’s integrated STi 2 GaN family of GaN power devices for automotive applications at the PCIM Europe virtual conference. Leveraging ...
GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...
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