Abstract: Gallium Nitride (GaN)-based Gate Stack (GS) Gate-All-Around Field Effect Transistors (GAA FETs) are promising candidates for next-generation energy-efficient electronics due to their ...
Abstract: A two-stage GaN operational transconductance amplifier is proposed, which uses a dynamic voltage shifter based on the switched-capacitor technique to achieve robustness against process ...
Carbon nanotubes and fullerenes are allotropes of carbon characterized by a hollow structure and extraordinary thermal, electrical and mechanical properties. Spherical fullerenes are also called ...
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