But in this experiment, the researchers replaced ultracold atoms with the semiconductor aluminium gallium arsenide and ...

and Oak Ridge National Laboratory examined a potential route to achieve peak performance of aluminum gallium nitride, Al x Ga ...

However, unlike group III–V compound materials such as gallium arsenide (GaAs), Si and Ge ... mechanism in a metal–organic vapor phase epitaxy (MOVPE) reactor. Between the trunk and branch growth ...

Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States Neuroscience Interdepartmental Program, University of California, Los ...