IEEE

Enhancement Mode N-Polar Deep Recess GaN HEMT With Record Small Signal Performance

Abstract: In this letter, we report a novel enhancement mode N-polar Deep Recess (NPDR) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). Enhancement mode operation was achieved by ...
IEEE

An ANN-Based GaN HEMT Large-Signal Model With High Near-Threshold Accuracy and Its Application in Class-AB MMIC PA Design

Abstract: Artificial neural network-based gallium nitride high-electron-mobility transistor (ANN-based GaN HEMT) models have garnered significant attention due to their high accuracy, low development ...
powerelectronicsnews

Imec’s Push Towards Industry-Wide 300mm GaN Adoption

Imec’s practical approach to their 300-mm GaN program, including the challenges and opportunities of moving to larger wafer diameters. Imec, an open R&D organization that specializes in ...