Abstract: In this article, a setup to characterize the failure mechanisms and degradation indicators of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) under short-circuit events is ...
Abstract: This paper presents a setup to characterize GaN HEMTS devices under short-circuit events and the degradation of some of their parameters. First, the previous literature in the field is ...
The Delhi High Court on Thursday took strong exception to the language used by Newslaundry journalist Manisha Pande in a video concerning the TV Today Network, the owner of Aaj Tak and India Today ...
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